BS EN 60749-44:2016
$142.49
Semiconductor devices. Mechanical and climatic test methods – Neutron beam irradiated single event effect (SEE) test method for semiconductor devices
| Published By | Publication Date | Number of Pages |
| BSI | 2016 | 26 |
IEC 60749-44:2016 establishes a procedure for measuring the single event effects (SEEs) on high density integrated circuit semiconductor devices including data retention capability of semiconductor devices with memory when subjected to atmospheric neutron radiation produced by cosmic rays. The single event effects sensitivity is measured while the device is irradiated in a neutron beam of known flux. This test method can be applied to any type of integrated circuit. NOTE 1 – Semiconductor devices under high voltage stress can be subject to single event effects including SEB, single event burnout and SEGR single event gate rupture, for this subject which is not covered in this document, please refer to IEC 62396-4. NOTE 2 – In addition to the high energy neutrons some devices can have a soft error rate due to low energy (<1 eV) thermal neutrons. For this subject which is not covered in this document, please refer to IEC 62396-5.
PDF Catalog
| PDF Pages | PDF Title |
|---|---|
| 5 | English CONTENTS |
| 7 | FOREWORD |
| 9 | 1 Scope 2 Normative references 3 Terms and definitions |
| 12 | 4 Test apparatus 4.1 Measurement equipment |
| 13 | 4.2 Radiation source 4.3 Test sample 5 Procedure neutron irradiated soft error test 5.1 Surface preparation 5.2 Power supply voltage |
| 14 | 5.3 Ambient temperature 5.4 Core cycle time 5.5 Data pattern 5.6 Number of measurement samples 5.7 Calculations for time required in the beam 6 Evaluation 6.1 Measurement and failure rate estimation |
| 15 | 6.2 Determination of MCU and MBU cross sections 6.3 Determination of device FIT (event rate) from cross section 7 Summary |
| 16 | Annex A (informative) Additional information for the applicable procurement specification A.1 General A.2 Description of the beam source A.3 Description of the sample and test vehicle A.3.1 Sample size A.3.2 Vehicle description |
| 17 | A.4 Test description A.5 Test results |
| 19 | Annex B (informative) White neutron test apparatus Figure B.1 – Typical white neutron spectra with different shield (polyethylene) thickness |
| 20 | Figure B.3 – Comparison of LANSCE (WNR) and TRIUMF neutron spectra with terrestrial neutron spectrum Figure B.2 – Typical neutron spectrum |
| 21 | Annex C (informative) Failure rate calculation C.1 An influence of soft error for actual semiconductor devices C.1.1 General C.1.2 Duty derating C.1.3 Utility derating Figure C.1 – Schematic image of duty derating |
| 22 | C.1.4 Critically derating C.2 Failure rate calculation including derating Figure C.2 – Schematic image of memory effective area for utility derating |
| 23 | Bibliography |
