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BS IEC 63275-1:2022

BS IEC 63275-1:2022

$102.76

Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors – Test method for bias temperature instability

Published By Publication Date Number of Pages
BSI 2022 16
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PDF Catalog

PDF Pages PDF Title
2 undefined
4 English
CONTENTS
5 FOREWORD
7 INTRODUCTION
8 1 Scope
2 Normative references
3 Terms and definitions
4 Requirements
4.1 Sample
4.2 Test temperature
4.3 Test voltage
9 4.4 Test time
4.5 Measurement temperature
4.6 Failure criteria
4.7 Test circuit
5 Procedures
5.1 Sequence of procedure
Figures
Figure 1 – Circuit diagram for bias temperature instability test
10 5.2 Select sample
5.3 VGS(th) measurement methods
Figure 2 – Test flow chart
11 Figure 3 – Schematic of test pattern for Example 1
Figure 4 – IDS versus VGS curve for Example 1
12 Figure 5 – Schematic of test pattern for Example 2 and Example 3
Figure 6 – IDS versus VGS curve for Example 2
Figure 7 – IDS – VGS curve for Example 3
13 5.4 How to provide a reproducible measurement of VGS(th)
5.5 Initial measurement
Figure 8 – Schematic of test pattern for Example 4
14 5.6 Apply voltage and temperature stress
5.7 Remove voltage and temperature stress
5.8 Intermediate measurement
6 Test report
15 Bibliography

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BS IEC 63275-1:2022
$102.76