{"id":341467,"date":"2024-10-19T23:56:34","date_gmt":"2024-10-19T23:56:34","guid":{"rendered":"https:\/\/pdfstandards.shop\/product\/uncategorized\/bs-iso-179152018\/"},"modified":"2024-10-25T23:08:51","modified_gmt":"2024-10-25T23:08:51","slug":"bs-iso-179152018","status":"publish","type":"product","link":"https:\/\/pdfstandards.shop\/product\/publishers\/bsi\/bs-iso-179152018\/","title":{"rendered":"BS ISO 17915:2018"},"content":{"rendered":"
This document describes methods of measuring temperature and injected current dependence of lasing wavelengths, and lasing spectral line width in relation to semiconductor lasers for sensing applications.<\/p>\n
This document is applicable to all kinds of semiconductor lasers, such as edge-emitting type and vertical cavity surface emitting type lasers, bulk-type and (strained) quantum well lasers, and quantum cascade lasers, used for optical sensing in e.g. industrial, medical and agricultural fields.<\/p>\n
PDF Pages<\/th>\n | PDF Title<\/th>\n<\/tr>\n | ||||||
---|---|---|---|---|---|---|---|
2<\/td>\n | National foreword <\/td>\n<\/tr>\n | ||||||
6<\/td>\n | Foreword <\/td>\n<\/tr>\n | ||||||
7<\/td>\n | Introduction <\/td>\n<\/tr>\n | ||||||
9<\/td>\n | 1 Scope 2 Normative references 3 Terms and definitions 4 Optical sensing using semiconductor lasers 4.1 General 4.2 Semiconductor laser 4.2.1 General <\/td>\n<\/tr>\n | ||||||
10<\/td>\n | 4.2.2 Basic structure 4.2.3 Transverse mode stabilizing structure 4.2.4 Mode (wavelength) selection structure 4.2.5 Active layer structure <\/td>\n<\/tr>\n | ||||||
11<\/td>\n | 4.3 Common sensing technique and equipment using semiconductor lasers 4.3.1 General 4.3.2 Tunable laser absorption spectroscopy (TLAS) <\/td>\n<\/tr>\n | ||||||
12<\/td>\n | 4.3.3 Cavity ring down spectroscopy (CRDS) <\/td>\n<\/tr>\n | ||||||
13<\/td>\n | 4.3.4 Photoacoustic spectroscopy (PAS) <\/td>\n<\/tr>\n | ||||||
14<\/td>\n | 4.4 Temperature and current dependence of wavelength <\/td>\n<\/tr>\n | ||||||
16<\/td>\n | 4.5 Effect of current injection on lasing wavelength <\/td>\n<\/tr>\n | ||||||
17<\/td>\n | 4.6 Effect of ambient temperature on lasing wavelength <\/td>\n<\/tr>\n | ||||||
18<\/td>\n | 5 Measurement method for temperature dependence of wavelength 5.1 General 5.2 Description of measurement setup and requirements <\/td>\n<\/tr>\n | ||||||
19<\/td>\n | 5.3 Precautions to be observed <\/td>\n<\/tr>\n | ||||||
20<\/td>\n | 5.4 Measurement procedures 6 Measurement method for current dependence of wavelength 6.1 General 6.2 Description of measurement setup and requirements <\/td>\n<\/tr>\n | ||||||
21<\/td>\n | 6.3 Precautions to be observed <\/td>\n<\/tr>\n | ||||||
22<\/td>\n | 6.4 Measurement procedures 6.4.1 Static current dependence 6.4.2 Dynamic current coefficient 7 Measurement method of spectral line width 7.1 General <\/td>\n<\/tr>\n | ||||||
23<\/td>\n | 7.2 Description of measurement setup and requirements <\/td>\n<\/tr>\n | ||||||
26<\/td>\n | 7.3 Precautions to be observed 7.4 Measurement procedures 7.4.1 System employing two semiconductor lasers [shown in Figures 11 and 12] 7.4.2 Self-delayed heterodyne [shown in Figure 13] <\/td>\n<\/tr>\n | ||||||
28<\/td>\n | Annex A (informative) Essential ratings and characteristics <\/td>\n<\/tr>\n | ||||||
37<\/td>\n | Bibliography <\/td>\n<\/tr>\n<\/table>\n","protected":false},"excerpt":{"rendered":" Optics and photonics. Measurement method of semiconductor lasers for sensing<\/b><\/p>\n |