{"id":234045,"date":"2024-10-19T15:15:54","date_gmt":"2024-10-19T15:15:54","guid":{"rendered":"https:\/\/pdfstandards.shop\/product\/uncategorized\/bs-iec-63068-22019\/"},"modified":"2024-10-25T09:47:28","modified_gmt":"2024-10-25T09:47:28","slug":"bs-iec-63068-22019","status":"publish","type":"product","link":"https:\/\/pdfstandards.shop\/product\/publishers\/bsi\/bs-iec-63068-22019\/","title":{"rendered":"BS IEC 63068-2:2019"},"content":{"rendered":"
IEC 63068-2:2019(E) provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies optical images to enable the detection and categorization of the defects for SiC homoepitaxial wafers. This document deals with a non-destructive test method for the defects so that destructive methods such as preferential etching are out of scope in this document.<\/p>\n
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2<\/td>\n | undefined <\/td>\n<\/tr>\n | ||||||
4<\/td>\n | CONTENTS <\/td>\n<\/tr>\n | ||||||
6<\/td>\n | FOREWORD <\/td>\n<\/tr>\n | ||||||
8<\/td>\n | INTRODUCTION <\/td>\n<\/tr>\n | ||||||
9<\/td>\n | 1 Scope 2 Normative references 3 Terms and definitions <\/td>\n<\/tr>\n | ||||||
13<\/td>\n | 4 Optical inspection method 4.1 General <\/td>\n<\/tr>\n | ||||||
14<\/td>\n | 4.2 Principle 4.3 Requirements 4.3.1 Illumination <\/td>\n<\/tr>\n | ||||||
15<\/td>\n | 4.3.2 Wafer positioning and focusing 4.3.3 Image capturing 4.3.4 Image processing 4.3.5 Image analysis 4.3.6 Image evaluation 4.3.7 Documentation <\/td>\n<\/tr>\n | ||||||
16<\/td>\n | 4.4 Parameter settings 4.4.1 General 4.4.2 Parameter setting process 4.5 Procedure 4.6 Evaluation 4.6.1 General 4.6.2 Mean width of planar and volume defects <\/td>\n<\/tr>\n | ||||||
17<\/td>\n | 4.6.3 Evaluation process 4.7 Precision 4.8 Test report <\/td>\n<\/tr>\n | ||||||
18<\/td>\n | Annex A (informative) Optical inspection images of defects A.1 General A.2 Micropipe Figures Figure A.1 \u2013 Micropipe <\/td>\n<\/tr>\n | ||||||
19<\/td>\n | A.3 TSD A.4 TED Figure A.2 \u2013 TSD <\/td>\n<\/tr>\n | ||||||
20<\/td>\n | A.5 BPD A.6 Scratch trace Figure A.3 \u2013 TED Figure A.4 \u2013 Scratch trace <\/td>\n<\/tr>\n | ||||||
21<\/td>\n | A.7 Stacking fault A.8 Propagated stacking fault Figure A.5 \u2013 Stacking fault <\/td>\n<\/tr>\n | ||||||
22<\/td>\n | A.9 Stacking fault complex Figure A.6 \u2013 Propagated stacking fault <\/td>\n<\/tr>\n | ||||||
23<\/td>\n | A.10 Polytype inclusion Figure A.7 \u2013 Stacking fault complex <\/td>\n<\/tr>\n | ||||||
24<\/td>\n | Figure A.8 \u2013 Polytype inclusion <\/td>\n<\/tr>\n | ||||||
25<\/td>\n | A.11 Particle inclusion A.12 Bunched-step segment Figure A.9 \u2013 Particle inclusion <\/td>\n<\/tr>\n | ||||||
26<\/td>\n | Figure A.10 \u2013 Bunched-step segment <\/td>\n<\/tr>\n | ||||||
27<\/td>\n | Bibliography <\/td>\n<\/tr>\n<\/table>\n","protected":false},"excerpt":{"rendered":" Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices – Test method for defects using optical inspection<\/b><\/p>\n |